收藏本站
NTA4151P, NTE4151P
Small Signal MOSFET
? 20 V, ? 760 mA, Single P ? Channel,
Gate Zener, SC ? 75, SC ? 89
Features
? Low R DS(on) for Higher Efficiency and Longer Battery Life
? Small Outline Package (1.6 x 1.6 mm)
? SC ? 75 Standard Gullwing Package
? ESD Protected Gate
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) TYP
0.26 W @ ? 4.5 V
0.35 W @ ? 2.5 V
0.49 W @ ? 1.8 V
I D MAX
? 760 mA
Applications
?
?
?
?
High Side Load Switch
DC ? DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
P ? Channel MOSFET
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Units
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 20
± 6.0
V
V
S
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
SC ? 75
SC ? 89
Steady State
Steady State
I D
P D
? 760
301
313
mA
mW
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Pulsed Drain Current tp =10 m s
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
Gate ? to ? Source ESD Rating ?
(Human Body Model, Method 3015)
I DM
T J ,
T STG
I S
T L
ESD
± 1000
? 55 to
150
? 250
260
1800
mA
° C
mA
° C
V
2
1
SC ? 75 / SOT ? 416
CASE 463
STYLE 5
3
2
1
SC ? 89
3
Drain
xx M G
G
1 2
Gate Source
THERMAL RESISTANCE RATINGS
Junction ? to ? Ambient ? Steady State (Note 1) R q JA ° C/W
SC ? 75 415
SC ? 89 400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
CASE 463C
xx = Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 7
1
Publication Order Number:
NTA4151P/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTA4153NT1 MOSFET N-CH 20V 915MA SOT-416
NTA7002NT1 MOSFET N-CH 30V 154MA SOT-416
NTB13N10T4G MOSFET N-CH 100V 13A D2PAK
NTB23N03RT4G MOSFET PWR N-CHAN 25V 23A D2PAK
NTB25P06G MOSFET P-CH 60V 27.5A D2PAK
NTB30N06T4 MOSFET N-CH 60V 27A D2PAK
NTB30N20T4G MOSFET N-CH 200V 30A D2PAK
NTB35N15T4 MOSFET N-CH 150V 37A D2PAK
相关代理商/技术参数
NTA4151PT1G 功能描述:MOSFET -20V -760mA PChannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTA4151PT1G 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 760mA SC-75 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET, -20V, 760mA SC-75
NTA4151PT1H 制造商:ON Semiconductor 功能描述:PFET SC75 20V 760MA TR - Tape and Reel
NTA4153N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89
NTA4153NT1 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTA4153NT1G 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTA4153NT1G 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 20V 915MA SC-75
NTA4153NT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: